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                   Philips Semiconductors Product specification Damper diode BY459-1500, BY459-1500S fast, high-voltage THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to - - 1.5 K/W mounting base Thermal resistance junction to in free air - 60 - K/W ambient Rth j-a STATIC CHARACTERISTICS Tj = 25 ?C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BY459 1500 1500S 1500 1500S VF Forward voltage IF = 6.5 A 0.95 1.05 1.30 1.35 V IF = 6.5 A; T j = 125 ?C 0.85 0.95 1.20 1.25 V Reverse current VR = 1300 V - 250 - 250 μA VR = 1300 V; T j = 125 ?C - 1 - 1 mA IR DYNAMIC CHARACTERISTICS Tj = 25 ?C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BY459 1500 1500S 1500 1500S t Qrr Vs t fr fr Reverse recovery time IF = 1 A, V R ≥ 30 V; 0.25 0.17 0.35 0.22 Reverse recovery charge IF = 2 A, -dI F/dt = 20 A/μs 2.0 0.70 3.0 0.95 Peak forward recovery voltage IF = 6.5A, dI F/dt = 50A/μs 8.0 11.0 14.0 19.0 V Forward recovery time IF = 6.5A, dI F/dt = 50A/μs 170 200 250 300 ns μs μC September 1998 2 Rev 1.100 |